FDMC2674_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ

November 2012
FDMC2674
tm
N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366mΩ
Features
General Description
„ Max r_DS(on) = 366mΩ at V_GS = 10V, I_D = 1.0A
„ Typ Q_g = 12.7nC at V_GS = 10V
„ Low Miller charge
„ Low Q_rr Body Diode
„ Optimized efficiency at high frequencies
„ UIS Capability ( Single Pulse and Repetitive Pulse)
„ RoHS Compliant
UltraFET device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r_DS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures
Top
8765
Bottom
DD D D
1 234
GS S S
MLP 3.3x3.3
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
T_C= 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1b)
(Note 3)
(Note 1a)
Ratings
220
±20
7.0
1.0
13.8
11
42
2.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
3.0
(Note 1a)
60
°C/W
Device Marking
FDMC2674
Device
FDMC2674
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC2674 Rev.F3
www.fairchildsemi.com