FDMC2674 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET

May 2006
FDMC2674
tm
N-Channel UltraFET Trench^® MOSFET
220V, 1A, 366mΩ
Features
General Description
„ Max r_DS(on) = 366mΩ at V_GS = 10V, I_D = 1A
„ Typ Q_g = 12.7nC at V_GS = 10V
„ Low Miller charge
„ Low Q_rr Body Diode
„ Optimized efficiency at high frequencies
„ UIS Capability ( Single Pulse and Re-
petitive Pulse)
UltraFET^® device combines characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r_DS(on), low ESR, low total and Miller gate
charge, these devices are ideal for high frequency DC to
DC converters.
Applications
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures
„ RoHS Compliant
Bottom
Top
8
7
6
5
D
D
5
D
D
6
4
3
21
G
7
2
43
S
S
S
8
1
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Operating and Storage Temperature
(Note 3)
Ratings
220
±20
1
13.8
13
2.4
-55 to 150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
R_θJA
R_θJA
Thermal Resistance , Junction to Ambient
Thermal Resistance , Junction to Ambient
(Note 1a)
52
(Note 1b)
108
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device
FDMC2674 FDMC2674
Package
MLP 3.3 x 3.3
Reel Size
7’’
Tape Width
12mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMC2674 Rev. E
www.fairchildsemi.com