FDMC2610_07 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ

January 2007
FDMC2610
N-Channel UltraFET Trench^® MOSFET
tm
200V, 9.5A, 200mΩ
Features
General Description
„ Max r_DS(on) = 200mΩ at V_GS = 10V, I_D = 2.2A
„ Max r_DS(on) = 215mΩ at V_GS = 6V, I_D = 1.5A
„ Low Profile - 1mm max in a Power 33
„ RoHS Compliant
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
„ DC - DC Conversion
Bottom
78
6
5
Top
D
D
D
D
21
43
Power 33
G
S
S
S
D5
D6
D7
D₈
4^G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
200
±20
9.5
2.2
15
42
2.1
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3
(Note 1a)
60
°C/W
Device Marking
FDMC2610
Device
FDMC2610
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMC2610 Rev.C
www.fairchildsemi.com