FDMC2523P_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel QFET® -150V, -3A, 1.5Ω

FDMC2523P
P-Channel QFET^®
-150V, -3A, 1.5Ω
Features
„ Max r_DS(on) = 1.5Ω at V_GS = -10V, I_D = -1.5A
„ Low Crss ( typical 10pF)
„ Fast Switching
„ Low gate charge ( typical 6.2 nC )
„ Improved dv / dt capability
„ RoHS Compliant
November 2012
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC
motor control.
Application
„ Active Clamp Switch
Top
Bottom
Pin 1
S
D
S ^SG
S
S
D
S
D
D
D
D
D
G
D
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
T_L
dv/dt
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25°C
T_C = 100°C
Power Dissipation (Steady State) T_C = 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Peak Diode Recovery dv/dt
(Note 2)
Thermal Characteristics
Ratings
-150
±30
-3
-1.8
-12
42
-55 to +150
300
-5
Units
V
V
A
W
°C
°C
V/ns
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
3.0
°C/W
(Note 1a)
60
Device Marking
FDMC2523P
Device
FDMC2523P
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMC2523P Rev.C3
www.fairchildsemi.com