FDMC2523P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel QFET -150V, -3A, 1.5ohm

September 2006
FDMC2523P
P-Channel QFET^® 
-150V, -3A, 1.5:
Features
„ Low Crss ( typical 10pF)
„ Fast Switching
„ Low gate charge ( typical 6.2 nC )
„ Improved dv / dt capability
„ RoHS compliant
tm
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced technology
has been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications
such as audio amplifier, high efficiency switching DC/DC
converters, and DC motor control.
Application
„ Active Clamp Switch
Bottom
Top
8
7
6
5
D
D
D
D
5
6
21
43
G
7
S
S
S
8
MLP 3.3x3.3
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current - Continuous (Tc=25°C)
I_D
- Continuous (Tc=100°C)
- Pulsed
P_D
T_J, T_STG
T_L
Power Dissipation (Steady State)
Operating and Storage Temperature
Maximum lead temperature for soldering purposes, 1/8” from case for
5 seconds
dv/dt
Peak Diode Recovery dv/dt
(Note 2)
Thermal Characteristics
R_TJC
Thermal Resistance, Junction to Case
R_TJA
Thermal Resistance, Junction to Ambient
R_TJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
(Note 1b)
Device Marking
FDMC2523P
Device
FDMC2523P
Package
MLP 3.3X3.3
Reel Size
7"
Ratings
-150
±30
-3
-1.8
-12
25
-55 to +150
300
-5
5
52
108
Tape Width
8mm
4
3
2
1
Units
V
V
A
W
°C
°C
V/ns
°C/W
°C/W
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMC2523P Rev. B1
www.fairchildsemi.com