FDMC15N06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 55V, 15A, 0.090Ω

FDMC15N06
N-Channel MOSFET
55V, 15A, 0.090Ω
Features
• R_DS(on) = 0.075Ω ( Typ.)@ V_GS = 10V, I_D = 15A
• 100% Avalanche Tested
• RoHS Compliant
July 2009
Description
These N-Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance.This device is capable of
withstanding high energy in the avalanche mode and the diode
exhibits very low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching converters,
motor drivers, relay drivers, lowvoltage bus switches, and power
management in portable and battery-operated products.
Top
Bottom
Pin 1
S ^SG
S
D5
D6
MLP 3.3x3.3
DD
D
D
D7
D8
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Continuous (T_A = 25^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
(T_C = 25^oC)
(T_A = 25^oC)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1a)
(Note 2)
(Note 3)
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
Ratings
55
±20
15
9
2.4
60
36
15
3.5
35
2.3
-55 to +150
300
Ratings
3.5
53
4G
3S
2S
1S
Units
V
V
A
A
A
mJ
A
mJ
W
W
o_C
o_C
Units
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDMC15N06 Rev. A
www.fairchildsemi.com