FDMB668P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm

February 2007
FDMB668P
tm
P-Channel 1.8V Logic Level PowerTrench^® MOSFET
-20V, -6.1A, 35mΩ
Features
General Description
„ Max r_DS(on) = 35mΩ at V_GS = -4.5V, I_D = -6.1A
„ Max r_DS(on) = 50mΩ at V_GS = -2.5V, I_D = -5.1A
„ Max r_DS(on) = 70mΩ at V_GS = -1.8V, I_D = -4.3A
„ Excellent for portable application at V_GS = -1.8V
„ Thin profile - Maximum height = 0.8mm
„ RoHS compliant
FDMB668P is excellent for load switch and DC-DC conversion
among portable electronics. It achieves an optimal balance
among efficiency, thermal transfer and small form by integrating
a P-channel MOSFET with minimized on-state resistance into a
MicroFET 3x1.9 package. When optimizing the dimension of
portable applications, this little device offers a very efficient
solution.
Applications
„ Load Switch in:
-HDD
-Portable Gaming, MP3
-Notebook
„ DC/DC Conversion
PIN 1
GATE
SOURCE
MicroFET 3X1.9
D1
D2
D3
G₄
8D
7D
6D
5^S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-6.1
-40
1.9
0.8
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
165
°C/W
Device Marking
668
Device
FDMB668P
Package
MicroFET 3X1.9
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMB668P Rev.B
www.fairchildsemi.com