FDMB506P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 1.8V Logic Level PowerTrench MOSFET

December 2005
FDMB506P
P-Channel 1.8V Logic Level PowerTrench^ MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
• Load switch
• DC/DC Conversion
Features
• –6.8 A, –20V. R_DS(ON) = 30 mΩ @ V_GS = –4.5V
R_DS(ON) = 38 mΩ @ V_GS = –2.5V
R_DS(ON) = 70 mΩ @ V_GS = –1.8V
• Low profile – 0.8 mm maximum
• Fast switching
• RoHS compliant
PIN 1
GATE
SOURCE
MicroFET
3x1.9
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Power Dissipation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
506
FDMB506P
7’’
S₅
D₆
D₇
D₈
4^G
3^D
2^D
1^D
Ratings
–20
±8
–6.8
70
1.9
–55 to +150
65
208
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2005 Fairchild Semiconductor Corporation
FDMB506P Rev C1(W)