FDMB3900AN Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – nullDual N-Channel Power Trench® MOSFETTM 25 V, 7.0 A, 23 mΩ

FDMB3900AN
Dual N-Channel Power Trench^® MOSFET^TM
25 V, 7.0 A, 23 mΩ
December 2011
Features
General Description
„ Max r_DS(on) = 23 mΩ at V_GS = 10 V, I_D = 7.0 A
„ Max r_DS(on) = 33 mΩ at V_GS = 4.5 V, I_D = 5.5 A
„ Fast switching speed
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench^® process
that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance.
„ Low gate charge
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
These devices are well suited for low voltage and battery
powered applications where the low in-line power loss and fast
switching are required.
„ RoHS Compliant
Pin 1
MicroFET 3X1.9
D2 5
D2 6
D1 7
D1 8
Q2
4 G2
3 ^S2
Q1
2 ^G1
1 S1
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
25
±20
7.0
28
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
80
(Note 1b)
165
°C/W
Device Marking
3900
Device
FDMB3900AN
Package
MicroFET 3X1.9
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMB3900AN Rev.C1
www.fairchildsemi.com