FDMB3800N_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET 30V, 4.8A, 40m

August 2012
FDMB3800N
Dual N-Channel PowerTrench^® MOSFET
30V, 4.8A, 40m:
Features
General Description
„ Max r_DS(on) = 40m: at V_GS = 10V, I_D = 4.8A
„ Max r_DS(on) = 51m: at V_GS = 4.5V, I_D = 4.3A
„ Fast switching speed
„ Low gate Charge
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability.
„ RoHS Compliant
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
MicroFET 3X1.9
D2 5
D2 6
D1 7
D1 8
Q2
4 _G2
3 S2
Q1
2 G1
1 S1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
T_A = 25°C
Power Dissipation
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
Note 1a)
(Note 1b)
Ratings
30
±20
4.8
9
1.6
0.75
-55 to +150
Units
V
V
A
W
°C
R_TJA
R_TJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
80
(Note 1b)
165
°C/W
Device Marking
3800
Device
FDMB3800N
Package
MicroFET3X1.9
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMB3800N Rev. C2
www.fairchildsemi.com