FDMA910PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single P-Channel PowerTrench® MOSFET

FDMA910PZ
Single P-Channel PowerTrench^® MOSFET
-20 V, -9.4 A, 20 mΩ
April 2012
Features
General Description
„ Max r_DS(on) = 20 mΩ at V_GS = -4.5 V, I_D = -9.4 A
„ Max r_DS(on) = 24 mΩ at V_GS = -2.5 V, I_D = -8.6 A
„ Max r_DS(on) = 34 mΩ at V_GS = -1.8 V, I_D = -7.2 A
„ Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications.It features a MOSFET with low on-state resistance
and zener diode protection against ESD. The MicroFET 2X2
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.
„ HBM ESD protection level > 2.8k V typical (Note 3)
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
Pin 1
Drain
DD ^G
Source
Bottom Drain Contact
D1
6D
D2
5D
G3
DD S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
T_A = 25°C
Power Dissipation
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
4S
Ratings
-20
±8
-9.4
-45
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking
910
Device
FDMA910PZ
Package
MicroFET 2X2
Reel Size
7”
Tape Width
12mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMA910PZ Rev.C2
www.fairchildsemi.com