FDMA8884 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ

FDMA8884
Single N-Channel Power Trench^® MOSFET
30 V, 6.5 A, 23 mΩ
April 2012
Features
General Description
„ Max r_DS(on) = 23 mΩ at V_GS = 10 V, I_D = 6.5 A
„ Max r_DS(on) = 30 mΩ at V_GS = 4.5 V, I_D = 6.0 A
„ High performance trench technology for extremely low r_DS(on)
„ Fast switching speed
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on) switching performance.
Application
„ Primary Switch
Pin 1
Drain
DD ^G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D
D
D
D
G
S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T_C = 25 °C
-Continuous
T_A = 25 °C
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
8.0
6.5
25
1.9
0.7
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
180
°C/W
Device Marking
884
Device
FDMA8884
Package
MicroFET 2x2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMA8884 Rev.C3
www.fairchildsemi.com