FDMA86265P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET

May 2014
FDMA86265P
P-Channel PowerTrench^® MOSFET
-150 V, -1 A, 1.2 Ω
Features
General Description
„ Max r_DS(on) = 1.2 Ω at V_GS = -10 V, I_D = -1 A
„ Max r_DS(on) = 1.4 Ω at V_GS = -6 V, I_D = -0.9 A
„ Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench^® process that
has been optimized for the on-state resistance and yet maintain
superior switching performance.
„ Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
„ This product is optimised for fast switching applications as
well as load switch applications
Applications
„ Active Clamp Switch
„ Load Switch
„ 100% UIL tested
„ RoHS Compliant
Pin 1
Drain
DD ^G
Source
BBootttotomm DDraraininCCoonnta- ct
D
D
D
D
G
S
DD S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-150
±25
-1
-2
6
2.4
0.9
-55 to + 150
Units
V
V
A
mJ
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking
265
Device
FDMA86265P
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
1
FDMA86265P Rev.C
www.fairchildsemi.com