FDMA7632 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel PowerTrench® MOSFET 30 V, 9 A, 19 mΩ

FDMA7632
Single N-Channel PowerTrench^® MOSFET
January 2012
30 V, 9 A, 19 mΩ
Features
General Description
„ Max r_DS(on) = 19 mΩ at V_GS = 10 V, I_D = 9 A
„ Max r_DS(on) = 30 mΩ at V_GS = 4.5 V, I_D = 7 A
„ Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ Free from halogenated compounds and antimony oxides
„ RoHS compliant
This device has been designed to provide maximum efficiency
and thermal performance for synchronous buck converters. The
low r_DS(on) and gate charge provide excellent switching
performance.
Application
„ DC – DC Buck Converters
Pin 1
Drain
DD ^G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
9
24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking
632
Device
FDMA7632
Package
MicroFET 2x2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMA7632 Rev.C1
www.fairchildsemi.com