FDMA7628 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.4 A, 14.5 mΩ

FDMA7628
May 2012
Single N-Channel 1.5 V Specified PowerTrench^® MOSFET
20 V, 9.4 A, 14.5 mΩ
Features
General Description
„ Max r_DS(on) = 14.5 mΩ at V_GS = 4.5 V, I_D = 9.4 A
„ Max r_DS(on) = 18.2 mΩ at V_GS = 2.5 V, I_D = 8.3 A
„ Max r_DS(on) = 23.3 mΩ at V_GS = 1.8 V, I_D = 7.3 A
„ Max r_DS(on) = 32.3 mΩ at V_GS = 1.5 V, I_D = 6.2 A
„ Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
„ RoHS Compliant
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench^® process to
optimize the r_DS(ON) @ V_GS = 1.5 V on special MicroFET
leadframe.
Applications
„ Li-lon Battery Pack
„ DC-DC Buck Converters
Pin 1
Drain
DD ^G
Source
Bottom Drain Contact
D
D
D
D
G
S
DD S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
9.4
54
1.9
0.7
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
65
(Note 1b)
180
°C/W
Device Marking
104
Device
FDMA7628
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMA7628 Rev.C
www.fairchildsemi.com