FDMA530PZ_08 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single P-Channel PowerTrench® MOSFET

April 2008
FDMA530PZ
tm
Single P-Channel PowerTrench^® MOSFET
–30V, –6.8A, 35mΩ
Features
General Description
„ Max r_DS(on) = 35mΩ at V_GS = –10V, I_D = –6.8A
„ Max r_DS(on) = 65mΩ at V_GS = –4.5V, I_D = –5.0A
„ Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
„ HBM ESD protection level > 3k V typical (Note 3)
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable
applications . It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
„ RoHS Compliant
Pin 1
Drain
DD ^G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D1
6D
D2
5_D
G3
4_S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–30
±25
–6.8
–24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking
530
Device
FDMA530PZ
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMA530PZ Rev.B1
www.fairchildsemi.com