FDMA520PZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single P-Channel PowerTrench MOSFET -20V, -7.3A, 30mohm

January 2007
FDMA520PZ
Single P-Channel PowerTrench^® MOSFET
tm
–20V, –7.3A, 30mΩ
Features
General Description
„ Max r_DS(on) = 30mΩ at V_GS = –4.5V, I_D = –7.3A
„ Max r_DS(on) = 53mΩ at V_GS = –2.5V, I_D = –5.5A
„ Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
„ RoHS Compliant
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Pin 1
Drain
DD ^G
Source
DD S
MicroFET 2X2 (Bottom View)
Bottom Drain Contact
D1
6D
D2
5_D
G³
4_S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±12
–7.3
–24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking
520
Device
FDMA520PZ
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMA520PZ Rev.B
www.fairchildsemi.com