FDMA507PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 mOhm

May 2010
FDMA507PZ
Single P-Channel PowerTrench^® MOSFET
-20 V, -7.8 A, 24 mΩ
Features
General Description
„ Max r_DS(on) = 24 mΩ at V_GS = -5 V, I_D = -7.8 A
„ Max r_DS(on) = 25 mΩ at V_GS = -4.5 V, I_D = -7 A
„ Max r_DS(on) = 35 mΩ at V_GS = -2.5 V, I_D = -5.5 A
„ Max r_DS(on) = 45 mΩ at V_GS = -1.8 V, I_D = -4 A
„ Low Profile - 0.8 mm maximum - in the package MicroFET
2X2 mm
„ HBM ESD protection level > 3.2K V typical (Note3)
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-stade resistance.
The MicroFET 2X2 package offers exceptional thermal
perfomance for its physical size and is well suited to linear mode
applications.
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-7.8
-24
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking
507
Device
FDMA507PZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
1
FDMA507PZ Rev.C
www.fairchildsemi.com