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| FDMA430NZ_08 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single N-Channel 2.5V Specified PowerTrench® MOSFET30V, 5.0A, 40mΩ | |||
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April 2008
FDMA430NZ
tm
Single N-Channel 2.5V Specified PowerTrench® MOSFET
30V, 5.0A, 40mâ¦
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductorâs advanced Power Trench process
to optimize the RDS(on) @VGS=2.5V on special MicroFET
leadframe.
Applications
 Li-lon Battery Pack
Features
 RDS(on) = 40m⦠@ VGS = 4.5 V, ID = 5.0A
 RDS(on) = 50m⦠@ VGS = 2.5 V, ID = 4.5A
 Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
 HBM ESD protection level > 2.5k V typical (Note 3)
 RoHS Compliant
Pin 1
DD G
Drain
Source
DD S
MicroFET 2X2 (Bottom View)
S4
3G
D5
2D
D6
1D
Bottom Drain Contact
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD
Power dissipation (Steady State)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
430
Device
FDMA430NZ
Reel Size
7â
Tape Width
12mm
Ratings
30
±12
5.0
20
0.9
2.4
-55 to +150
Units
V
V
A
W
oC
145
oC/W
52
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMA430NZ Rev B2
www.fairchildsemi.com
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