FDMA420NZ_08 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30mΩ

April 2008
FDMA420NZ
tm
Single N-Channel 2.5V Specified PowerTrench^® MOSFET
20V, 5.7A, 30mΩ
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench
process to optimize the R_DS(on) @V_GS=2.5V on special
MicroFET leadframe.
Applications
„ Li-lon Battery Pack
Features
„ R_DS(on) = 30mΩ @ V_GS = 4.5 V, I_D = 5.7A
„ R_DS(on) = 40mΩ @ V_GS = 2.5 V, I_D = 5.0A
„ Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
„ HBM ESD protection level > 2.5k V typical (Note 3)
„ RoHS Compliant
Pin 1
DDG
Drain
Source
S4
D⁵
3G
2D
DD S
MicroFET Bottom View 2X2
D⁶
Bottom Drain Contact
1D
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
P_D
Power dissipation (Steady State)
(Note 1a)
(Note 1b)
T_J, T_STG Operating and Storage Junction Temperature Range
Ratings
20
±12
5.7
24
0.9
2.4
-55 to +150
Units
V
V
A
W
o_C
Thermal Characteristics
R_θJA
R_θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
145
o_C/W
(Note 1b)
52
Package Marking and Ordering Information
Device Marking
420
Device
FDMA420NZ
Reel Size
7”
Tape Width
12mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMA420NZ Rev B2
www.fairchildsemi.com