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FDMA410NZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20 V, 9.5 A, 23 mΩ
September 2008
FDMA410NZ
tm
Single N-Channel 1.5 V Specified PowerTrench® MOSFET
20 V, 9.5 A, 23 mΩ
Features
General Description
„ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
„ Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
„ Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
„ Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A
„ HBM ESD protection level > 2.5 kV (Note 3)
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET
leadframe.
Applications
„ Li-lon Battery Pack
„ Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
„ RoHS Compliant
Pin 1
Drain
DD G
Source
Bottom Drain Contact
D1
6D
D2
5D
DD S
MicroFET 2X2 (Bottom View)
G3
4S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
9.5
24
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking
410
Device
FDMA410NZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDMA410NZ Rev.B
www.fairchildsemi.com
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