FDMA3028N Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET 30 V, 3.8 A, 68 mΩ

FDMA3028N
June 2011
Dual N-Channel PowerTrench^® MOSFET
30 V, 3.8 A, 68 mΩ
Features
General Description
„ Max r_DS(on) = 68 mΩ at V_GS = 4.5 V, I_D = 3.8 A
„ Max r_DS(on) = 88 mΩ at V_GS = 2.5 V, I_D = 3.4 A
„ Max r_DS(on) = 123 mΩ at V_GS = 1.8 V, I_D = 2.9 A
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses. The MicroFET 2x2 package offers
exceptional thermal performance for its physical size and is well
suited to linear mode applications.
„ RoHS Compliant
PIN 1
S1 G1 D2
D1 D2
S1 1
G1 2
6 D1
5 ^G2
D1 G2 S2
D2 3
Top
Bottom
4 ^S2
MicroFET 2x2
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±12
3.8
16
1.5
0.7
-55 to +150
Units
V
V
A
W
°C
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
86
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1b)
173
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1c)
69
R_θJA
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1d)
151
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1e)
160
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1f)
133
Package Marking and Ordering Information
°C/W
Device Marking
328
Device
FDMA3028N
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMA3028N Rev.C2
www.fairchildsemi.com