FDMA291P_08 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single P-Channel 1.8V Specified PowerTrench® MOSFET

June 2008
FDMA291P
tm
Single P-Channel 1.8V Specified PowerTrench^® MOSFET
General Description
This device is designed specifically for battery charge
or load switching in cellular handset and other ultra-
portable applications. It features a MOSFET with low
on-state resistance.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
• –6.6 A, –20V. r_DS(ON) = 42 mΩ @ V_GS = –4.5V
r_DS(ON) = 58 mΩ @ V_GS = –2.5V
r_DS(ON) = 98 mΩ @ V_GS = –1.8V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
Pin 1
Drain
DD G
Source
Bottom Drain Contact
D1
6D
D2
5D
D DS
G₃
4S
MicroFET 2x 2
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DS
V_GS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
P_D
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
291
FDMA291P
7’’
Ratings
–20
±8
–6.6
–24
2.4
0.9
–55 to +150
52
145
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA291P Rev B3