FDMA2002NZ_08 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET

FDMA2002NZ
Dual N-Channel PowerTrench^® MOSFET
March 2008
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General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
• 2.9 A, 30 V R_DS(ON) = 123 mΩ @ V_GS = 4.5 V
R_DS(ON) = 140 mΩ @ V_GS = 3.0 V
R_DS(ON) = 163 mΩ @ V_GS = 2.5 V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• HBM ESD protection level = 1.8kV (Note 3)
• RoHS Compliant
PIN 1
S1 G1 D2
D1 D2
D1 G2 S2
MicroFET 2x2
S1 1
G1 2
D2 3
6 ^D1
5 G2
4 S2
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DS
V_GS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T_C = 25°C, V_GS = 4.5V)
– Continuous (T_C = 25°C, V_GS = 2.5V)
– Pulsed
P_D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Temperature
Ratings
30
±12
2.9
2.7
10
1.5
0.65
–55 to +150
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
002
FDMA2002NZ
7’’
83 (Single Operation)
193 (Single Operation)
68 (Dual Operation)
145 (Dual Operation)
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA2002NZ Rev B2 (W)