FDMA1430JP Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A

FDMA1430JP
Integrated P-Channel PowerTrench^® MOSFET and BJT
-30 V, -2.9 A, 90 mΩ
March 2013
Features
„ Max r_DS(on) = 90 mΩ at V_GS = -4.5 V, I_D = -2.9 A
„ Max r_DS(on) = 130 mΩ at V_GS = -2.5 V, I_D = -2.6 A
„ Max r_DS(on) = 170 mΩ at V_GS = -1.8 V, I_D = -1.7 A
„ Max r_DS(on) = 240 mΩ at V_GS = -1.5 V, I_D = -1 A
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2
„ HBM ESD protection level > 2 kV typical (Note 3)
„ RoHS Compliant
General Description
This device is designed specifically as a single package solution
for loadswitching in cellular handset and other ultra-portable
applications. It features a 50 V NPN BJT and a 30 V P-ch Trench
MOSFET in the space saving MicroFET 2x2 package that offers
exceptional thermal performance for it's physical size and is well
suited to linear mode applications.
Application
„ Loadswitching
PIN 1
E BD
E
C
C
D
B
G
C GS
Top
Bottom
MicroFET 2x2
D
S
Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Power Dissipation
T_A = 25°C
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 5)
(Note 1a)
(Note 1b)
Ratings
-30
±8
-2.9
-12
50
50
10
100
200
150
1.5
0.7
-55 to +150
Units
V
V
A
V
V
V
mA
mW
°C
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient(MOSFET)
Thermal Resistance, Junction to Ambient(MOSFET)
Package Marking and Ordering Information
(Note 1a)
86
(Note 1b)
173
°C/W
Device Marking
143
Device
FDMA1430JP
Package
MicroFET 2x2
Reel Size
7’’
Tape Width
8 mm
Quantity
5000 units
©2013 Fairchild Semiconductor Corporation
1
FDMA1430JP Rev.C1
www.fairchildsemi.com