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FDMA1032CZ_08 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 20V Complementary PowerTrench® MOSFE
March 2008
FDMA1032CZ
tm
20V Complementary PowerTrench® MOSFET
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset and other ultra-portable applications. It
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
Features
• Q1: N-Channel
3.7 A, 20V.
RDS(ON) = 68 mΩ @ VGS = 4.5V
RDS(ON) = 86 mΩ @ VGS = 2.5V
• Q2: P-Channel
–3.1 A, –20V. RDS(ON) = 95 mΩ @ VGS = –4.5V
RDS(ON) = 141 mΩ @ VGS = –2.5V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• HBM ESD protection level > 2kV (Note 3)
• RoHS Compliant
PIN 1
S1 G1 D2
D1 D2
S1 1
G1 2
6 D1
5 G2
D1 G2 S2
D2 3
4 S2
MicroFET 2x2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Drain Current – Continuous
ID
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Q1
Q2
20
–20
±12
±12
3.7
–3.1
6
–6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
032
FDMA1032CZ
7’’
Tape width
8mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA1032CZ Rev B2 (W)