FDMA1032CZ Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 20V Complementary PowerTrench MOSFET

May 2006
FDMA1032CZ
20V Complementary PowerTrench^® MOSFET
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset and other ultra-portable applications. It
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
PIN 1
S1 G1 D2
Features
• Q1: N-Channel
3.7 A, 20V. R_DS(ON) = 68 mΩ @ V_GS = 4.5V
R_DS(ON) = 86 mΩ @ V_GS = 2.5V
• Q2: P-Channel
–3.1 A, –20V. R_DS(ON) = 95 mΩ @ V_GS = –4.5V
R_DS(ON) = 141 mΩ @ V_GS = –2.5V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• RoHS Compliant
D1 D2
D1 G2 S2
MicroFET 2x2
S1 1
G1 2
D2 3
6 ^D1
5 G2
4 S2
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DS
V_GS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
032
FDMA1032CZ
7’’
Q1
Q2
20
–20
±12
±12
3.7
–3.1
6
–6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Tape width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA1032CZ Rev B (W)