FDMA1028NZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench MOSFET

May 2006
FDMA1028NZ
Dual N-Channel PowerTrench^® MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
PIN 1
S1 G1 D2
Features
• 3.7 A, 20V.
R_DS(ON) = 68 mΩ @ V_GS = 4.5V
R_DS(ON) = 86 mΩ @ V_GS = 2.5V
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• RoHS Compliant
D1 D2
D1 G2 S2
MicroFET 2x2
S1 1
G1 2
D2 3
6 ^D1
5 G2
4 S2
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DS
V_GS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
028
FDMA1028NZ
7’’
Ratings
20
±12
3.7
6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Tape width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA1028NZ Rev B (W)