FDMA1027P_06 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench MOSFET

August 2006
FDMA1027P
Dual P-Channel PowerTrench^® MOSFET
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
„ -3.0 A, -20V. R_DS(ON) = 120 mΩ @ V_GS = -4.5 V
R_DS(ON) = 160 mΩ @ V_GS = -2.5 V
R_DS(ON) = 240 mΩ @ V_GS = -1.8 V
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
„ RoHS Compliant
PIN
S1 G1 D2
D1 D2
S1 ¹
G1 2
6 D1
5 G2
D2 3
4 _S2
MicroFET _{D1 G2 S2}
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
P_D
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG Operating and Storage Junction Temperature Range
Ratings
-20
±8
-2.2
-6
1.4
0.7
-55 to +150
Units
V
V
A
W
o_C
Thermal Characteristics
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
o_C/W
Package Marking and Ordering Information
Device Marking
027
Device
FDMA1027P
Reel Size
7inch
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMA1027P Rev. D (W)