FDMA1025P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm

December 2006
FDMA1025P
Dual P-Channel PowerTrench^® MOSFET
tm
–20V, –3.1A, 105mΩ
Features
General Description
„ Max r_DS(on) = 155mΩ at V_GS = –4.5V, I_D = –3.1A
„ Max r_DS(on) = 220mΩ at V_GS = –2.5V, I_D = –2.3A
„ Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm‘
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra -
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and well suited to linear mode
applications.
Application
„ DC - DC Conversion
PIN 1
S1 G1 D2
D1
D2
S1 1
G1 2
6 _D1
5 G2
D1 G2 S2
MicroFET 2X2
D2 3
4 S2
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation for Single Operation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±12
–3.1
–6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
86
(Note 1b)
173
69
151
°C/W
Device Marking
025
Device
FDMA1025P
Package
MLP2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDMA1025P Rev.B
www.fairchildsemi.com