FDMA1023PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench MOSFET -20V, -3.7A, 72mohm

March 2007
FDMA1023PZ
Dual P-Channel PowerTrench^® MOSFET
–20V, –3.7A, 72mΩ
Features
General Description
„ Max r_DS(on) = 72mΩ at V_GS = –4.5V, I_D = –3.7A
„ Max r_DS(on) = 95mΩ at V_GS = –2.5V, I_D = –3.2A
„ Max r_DS(on) = 130mΩ at V_GS = –1.8V, I_D = –2.0A
„ Max r_DS(on) = 195mΩ at V_GS = –1.5V, I_D = –1.0A
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Pin 1
S1 G1 D2
S1 1
6 _D1
D1
D2
G1 2
5 G2
D2 3
4 _S2
MicroFET 2X2
D1 G2 S2
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–3.7
–6
1.5
0.7
–55 to +150
Units
V
V
A
W
°C
R_θJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
86
R_θJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1b)
173
R_θJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1c)
69
R_θJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1d)
151
Package Marking and Ordering Information
°C/W
Device Marking
023
Device
FDMA1023PZ
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMA1023PZ Rev.B
www.fairchildsemi.com