FDM6296_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel Logic-Level PowerTrench® MOSFET 30V,11.5A, 10.5mΩ

January 2007
FDM6296
Single N-Channel Logic-Level PowerTrench^® MOSFET ^tm
30V,11.5A, 10.5mΩ
Features
General Description
„ Max r_DS(on) = 10.5mΩ at V_GS = 10V, I_D = 11.5A
„ Max r_DS(on) = 15mΩ at V_GS = 4.5V, I_D = 10A
„ Low Qg, Qgd and Rg for efficient switching performance
„ RoHS Compliant
This single N-channel MOSFET in the thermally efficient
MicroFET package has been specifically designed to perform
well in Point of Load converters. Providing an optimized balance
between r_DS(on) and gate charge this device can be effectively
used as a “high side” control switch or “low side” synchronous
rectifier.
Application
„ Point of Load Converter
„ 1/16 Brick Synchronous Rectifier
Bottom
8
7
6
5
Top
D
D
D
D
21
43
Power 33
G
S
S
S
D5
D₆
D7
D₈
4^G
3^S
2S
1^S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
30
±20
11.5
40
2.1
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
3.0
(Note 1a)
60
°C/W
Device Marking
6296
Device
FDM6296
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDM6296 Rev.E
www.fairchildsemi.com