FDM6296 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel, Logic-Level, PowerTrench MOSFET

December 2004
FDM6296
Single N-Channel, Logic-Level, PowerTrench^® MOSFET
Features
■ 11.5 A, 30 V R_DS(ON) = 10.5 mΩ @ V_GS = 10 V
R_DS(ON) = 15 mΩ @ V_GS = 4.5 V
■ Low Qg, Qgd and Rg for efficient switching performance
■ Low Profile – MicroFET 3.3 x 3.3 mm
Applications
■ Point of Load Converter
■ 1/16 Brick Synchronous Rectifier
MicroFET
General Description
This single N-Channel MOSFET in the thermally efficient Micro-
FET package has been specifically designed to perform well in
Point of Load converters. Providing an optimized balance
between Rds(on) and gate charge this device can be effectively
used as a “high side” control switch or “low side” synchronous
rectifier.
Bottom
8
7
6
5
1
2
3
4
Top
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
T_J, T_STG Operating and Storage Junction Temperature Range
Ratings
30
±20
11.5
40
2.5
1.2
–55 to +150
Thermal Characteristics
R_θJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
52
R_θJA Thermal Resistance, Junction-to-Ambient
(Note 1b)
108
R_θJC Thermal Resistance, Junction-to-Case
(Note 1)
5
Package Marking and Ordering Information
Device Marking
6296
Device
FDM6296
Reel Size
7’’
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
1
FDM6296 Rev. D
www.fairchildsemi.com