FDM606P Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 1.8V Logic Level Power Trench MOSFET

July 2002
FDM606P
P-Channel 1.8V Logic Level Power Trench^® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
Applications
• Load switch
• Battery charge
• Battery disconnect circuits
Features
• Fast switching
• r_DS(ON) = 0.026Ω (Typ), V_GS = -4.5V
• r_DS(ON) = 0.033Ω (Typ), V_GS = -2.5V
• r_DS(ON) = 0.052Ω (Typ), V_GS = -1.8V
Bottomview 3 X 2 (8 Lead)
SinglePad
ShortPin
S
D
D
D
D
G
1
MicroFET 3x2-8
D
D
D
S
MOSFET Maximum Ratings T_A=25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = - 4.5V)
Continuous (T_C = 100^oC, V_GS = - 2.5V)
Continuous (T_C = 100^oC, V_GS = -1.8V)
Pulsed
P_D
Power dissipation
Derate above 25°C
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance Junction to Case (Note1)
Thermal Resistance Junction to Ambient (Note 2)
Package Marking and Ordering Information
Device Marking
.06P
Device
FDM606P
Package
MicroFET3x2
Reel Size
178 mm
1
8
2
7
3
6
4
5
Ratings
-20
±8
-6.8
-3.8
-3.0
Figure 4
1.92
15.4
-55 to 150
Units
V
V
A
A
A
W
mW/^oC
o_C
6.0
o_C/W
65
o_C/W
Tape Width
8 mm
Quantity
3000
©2002 Fairchild Semiconductor Corporation
FDM606P Rev. C