FDM3622_07 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ

FDM3622
N-Channel PowerTrench^® MOSFET
100V, 4.4A, 60mΩ
Features
General Description
January 2007
tm
„ Max r_DS(on) = 60mΩ at V_GS = 10V, I_D = 4.4A
„ Max r_DS(on) = 80mΩ at V_GS = 6.0V, I_D = 3.8A
„ Low Miller Charge
„ Low QRR Body Diode
„ Optimized efficiency at high frequencies
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
Application
„ Distributed Power Architectures and VRMs.
„ Primary Switch for 24V and 48V Systems
„ High Voltage Synchronous Rectifier
„ Formerly developmental type 82744
Bottom
78
6
5
Top
D
D
D
D
21
43
Power 33
G
S
S
S
D5
D₆
D7
D₈
4^G
3^S
2S
1^S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
100
±20
4.4
20
2.1
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
3.0
(Note 1a)
60
°C/W
Device Marking
FDM3622
Device
FDM3622
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDM3622 Rev.B
www.fairchildsemi.com