FDM3622 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

January 2005
FDM3622
N-Channel PowerTrench^® MOSFET
100V, 4.4A, 60mΩ
Features
r_DS(ON) = 44mΩ (Typ.), V_GS = 10V, I_D = 4.4A
Q_g(tot) = 13nC (Typ.), V_GS = 10V
Low Miller Charge
Low Q_RR Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
Applications
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Formerly developmental type 82744
MicroFET 3.3 x 3.3
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©2005 Fairchild Semiconductor Corporation
FDM3622 Rev. A
1
www.fairchildsemi.com