FDM3300NZ_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 10A, 23mΩ

January 2007
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench^® MOSFET ^tm
20V, 10A, 23mΩ
Features
General Description
„ Max r_DS(on) = 23mΩ at V_GS = 4.5V, I_D = 10A
„ Max r_DS(on) = 28mΩ at V_GS = 2.5V, I_D = 9A
„ >2000V ESD protection
„ Low Profile - 1mm maximum - in the new package MLP
3.3x3.3 mm
This dual N-Channel MOSFET has been designed using
Fairchild Semiconductor's advanced PowerTrench^® process to
optimize the r_DS(on) @ V_GS = 2.5V on special MLP lead frame
with all the drains on one side of the package.
„ RoHS Compliant
Application
„ Li-lon Battery Pack
DD22
D2
D1
D1
Power 33
G2
S2
G1
S1
D2 5
D2 6
D1 7
D1 8
4 G2
3 _S2
2 G1
1 _S1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation (Steady State)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Rating
20
±12
10
40
2.1
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
60
(Note 1b)
135
°C/W
Device Marking
3300N
Device
FDM3300NZ
Package
Power 33
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDM3300NZ Rev.F
www.fairchildsemi.com