FDM3300NZ Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

February 2003
FDM3300NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
• Li-Ion Battery Pack
Features
• 10 A, 20 V
RDS(ON) = 23 mΩ @ VGS = 4.5 V
RDS(ON) = 28 mΩ @ VGS = 2.5 V
• > 2000v ESD Protection
• Low Profile – 1mm maximum – in the new package
MicroFET 3.3x3.3 mm
D2 ^DD22
D1
D1
S2 ^G2
S1 ^G1
MicroFET
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
3300N
FDM3300NZ
7’’
1
2
3
4
Ratings
20
±12
10
40
2.5
1.2
–55 to +150
52
108
5
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDM3300NZ Rev. E3 (W)