FDM2509NZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET

February 2006
FDM2509NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench^
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R_DS(ON) @ V_GS = 2.5v on
special MicroFET lead frame with all the drains on one
side of the package.
Applications
• Li-Ion Battery Pack
PIN 1
S1 S1 G1
Features
• 8.7 A, 20 V
R_DS(ON) = 18 mΩ @ V_GS = 4.5 V
R_DS(ON) = 24 mΩ @ V_GS = 2.5 V
• ESD protection diode (note 3)
• Low Profile – 0.8mm maximum – in the new package
MicroFET 2x5 mm
Bottom Drain Contact
G2 ^{4 Q2}
3 _G1
S2 S2 G2
MLP 2x5
S2 ₅
2 ^S1
S2 ₆
Q1 ^{1 S1}
Bottom Drain Contact
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature
Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Drain)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2509Z
FDM2509NZ
7’’
Ratings
20
±12
8.7
30
2.2
0.8
–55 to +150
55
2
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2006 Fairchild Semiconductor Corporation
FDM2509NZ Rev C2