FDLL485B Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – High Conductance, Low Leakage Diode

FDLL485B
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
Expansion Gap
High Conductance,
Low Leakage Diode
Absolute Maximum Ratings* TA = 25^OC unless otherwise noted
Sym
Parameter
Value
T_stg
T_J
P_D
R_OJA
W_iv
I_O
I_F
i_f
i_F(surge)
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T_A = 25^OC
Linear Derating Factor from T_A = 25^OC
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (IF)
Recurrent Peak Forward Current
Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
-65 to +200
-65 to +200
500
3.33
350
180
200
500
600
1.0
4.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
RED
GRAY
Units
O_C
O_C
mW
mW/^OC
O_C/W
V
mA
mA
mA
Amp
Amp
Electrical Characteristics TA = 25^OC unless otherwise noted
SYM CHARACTERISTICS
B_V Breakdown Voltage
I_R Reverse Leakage
V_F Forward Voltage
C_T Capacitance
© 1997 Fairchild Semiconductor Corporation
MIN
200
MAX
25
5.0
1.00
6.0
UNITS
V
nA
uA
V
pF
TEST CONDITIONS
I_R = 100 uA
V_R = 180 V
V_R = 180 V T_A = 150^OC
I_F = 100 mA
V_R = 0.0 V, f = 1.0 MHz