FDJ129P_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel -2.5 Vgs Specified PowerTrench MOSFET

November 2007
tm
FDJ129P
P-Channel -2.5 Vgs Specified PowerTrench^ MOSFET
General Description
This P-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
Features
• –4.2 A, –20 V.
R_DS(ON) = 70 mΩ @ V_GS = –4.5 V
R_DS(ON) = 120 mΩ @ V_GS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low R_DS(ON)
• Compact industry standard SC75-6 surface mount
package
• RoHS Compliant
G
S
S
SC75-6 FLMP
S
S
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
Drain-Source Voltage
Gate-Source Voltage
I_D
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.A
FDJ129P
7’’
Bottom Drain
4
5
6
Ratings
–20
± 12
–4.2
–16
1.6
–55 to +150
77
Tape width
8mm
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2007 Fairchild Semiconductor Corporation
FDJ129P Rev G (W)