FDJ128N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel 2.5 Vgs Specified PowerTrench MOSFET

August 2004
FDJ128N
N-Channel 2.5 Vgs Specified PowerTrench^ MOSFET
General Description
This N-Channel -2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
Features
• 5.5 A, 20 V.
R_DS(ON) = 35 mΩ @ V_GS = 4.5 V
R_DS(ON) = 51 mΩ @ V_GS = 2.5 V
• Low gate charge
• High performance trench technology for extremely
low R_DS(ON)
• Compact industry standard SC75-6 surface mount
package
G
S
S
S
S
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.B
FDJ128N
7’’
Ratings
20
± 12
5.5
16
1.6
–55 to +150
77
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDJ128N Rev B2 W)