FDJ127P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel -1.8 Vgs Specified PowerTrench MOSFET

July 2004
FDJ127P
P-Channel -1.8 Vgs Specified PowerTrench^ MOSFET
General Description
This P-Channel -1.8V specified MOSFET uses
Fairchild’s advanced low voltage Power Trench
process. It has been optimized for battery power
management applications.
Applications
• Battery management
• Load switch
Features
• –4.1 A, –20 V.
R_DS(ON) = 60 mΩ @ V_GS = –4.5 V
R_DS(ON) = 85 mΩ @ V_GS = –2.5 V
R_DS(ON) = 133 mΩ @ V_GS = –1.8 V
• Low gate charge
• High performance trench technology for extremely
low R_DS(ON)
• Compact industry standard SC75-6 surface mount
package
G
S
S
SC75-6 FLMP
S
S
S
Bottom Drain
4
3
5
2
6
1
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
P_D
T_J, T_STG
Power Dissipation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
Note 1)
Ratings
–20
±8
–4.1
–16
1.6
–55 to +150
77
Units
V
V
A
W
°C
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.C
FDJ127P
7’’
Tape width
8mm
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDJ127P Rev B2 (W)