FDJ1032C_08 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Complementary PowerTrench MOSFET

F
FDJ1032C
Complementary PowerTrench^® MOSFET
June 2008
Features
■ Q1 –2.8 A, –20 V.
■ Q2 3.2 A, 20 V.
■ Low gate charge
R_DS(ON) = 160 mΩ @ V_GS = –4.5 V
R_DS(ON) = 230 mΩ @ V_GS = –2.5 V
R_DS(ON) = 390 mΩ @ V_GS = –1.8 V
R_DS(ON) = 90 mΩ @ V_GS = 4.5 V
R_DS(ON) = 130 mΩ @ V_GS = 2.5 V
■ High performance trench technology for extremely low
R_DS(ON)
■ FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
■ RoHS Compliant
General Description
These N & P-Channel MOSFETs are produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and yet main-
tain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
Applications
■ DC/DC converter
■ Load switch
■ Motor Driving
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
4
3
Q2 (N)
5
2
6
1
Q1 (P)
Bottom Drain Contact
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Q1
Q2
–20
20
±8
±12
–2.8
3.2
–12
12
1.5
0.9
–55 to +150
80
5
Units
V
V
A
W
°C
°C/W
©2008 Fairchild Semiconductor Corporation
1
FDJ1032C Rev. B2(W)
www.fairchildsemi.com