|
FDJ1028N_06 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel 2.5 Vgs Specified PowerTrench MOSFET | |||
|
August 2006
FDJ1028N
N-Channel 2.5 Vgs Speciï¬ed PowerTrench® MOSFET
Features
â 3.2 A, 20 V.
RDS(ON) = 90 m⦠@ VGS = 4.5 V
RDS(ON) = 130 m⦠@ VGS = 2.5 V
â Low gate charge
â High performance trench technology for extremely low
RDS(ON)
â FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
Applications
â Battery management
General Description
This dual N-Channel 2.5V speciï¬ed MOSFET uses Fairchildâs
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the RDS(ON) and thermal properties of the device are
optimized for battery power management applications.
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
4
3
5
2
6
1
Bottom Drain Contact
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Power Dissipation for single Operation
(Note 1a)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R θ JA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
Ratings
20
±12
3.2
12
1.5
â55 to +150
80
5
Packge Marking and Ordering Information
Device Marking
.F
Device
FDJ1028N
Reel Size
7"
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDJ1028N Rev. B3 (W)
www.fairchildsemi.com
|
▷ |