FDJ1028N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel 2.5 Vgs Specified PowerTrench MOSFET

February 2005
FDJ1028N
N-Channel 2.5 Vgs Specified PowerTrench^® MOSFET
Features
■ 3.2 A, 20 V.
R_DS(ON) = 90 mΩ @ V_GS = 4.5 V
R_DS(ON) = 130 mΩ @ V_GS = 2.5 V
■ Low gate charge
■ High performance trench technology for extremely low
R_DS(ON)
■ FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
Applications
■ Battery management
General Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the R_DS(ON) and thermal properties of the device are
optimized for battery power management applications.
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
4
3
5
2
6
1
Bottom Drain Contact
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for single Operation
(Note 1a)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
Ratings
20
±12
3.2
12
1.5
–55 to +150
80
5
Packge Marking and Ordering Information
Device Marking
.F
Device
FDJ1028N
Reel Size
7"
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDJ1028N Rev. B2 (W)
www.fairchildsemi.com