FDJ1027P_06 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

August 2006
FDJ1027P
P-Channel 1.8V Specified PowerTrench^® MOSFET
Features
■ –2.8 A, –20 V
R_DS(ON) = 160 mΩ @ V_GS = –4.5 V
R_DS(ON) = 230 mΩ @ V_GS = –2.5 V
R_DS(ON) = 390 mΩ @ V_GS = –1.8 V
■ Low gate charge, High Power and Current handling capability
■ High performance trench technology for extremely low
R_DS(ON)
■ FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
Applications
■ Battery management/Charger Application
■ Load switch
General Description
This dual P-Channel 1.8V specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the R_DS(ON) and thermal properties of the device are
optimized for battery power management applications.
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
4
3
5
2
6
1
MOSFET Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
.G
FDJ1027P
7"
Ratings
–20
±8
–2.8
–12
1.5
0.9
–55 to +150
80
5
8mm
Units
V
V
A
W
°C
°C/W
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDJ1027P Rev. C3
www.fairchildsemi.com