FDJ1027P Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

November 2004
FDJ1027P
P-Channel 1.8V Specified PowerTrench^® MOSFET
General Description
This dual P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SC75, the R_DS(ON) and thermal
properties of the device are optimized for battery power
management applications.
Applications
• Battery management/Charger Application
• Load switch
Features
• –2.8 A, –20 V R_DS(ON) = 160 mΩ @ V_GS = –4.5 V
R_DS(ON) = 230 mΩ @ V_GS = –2.5 V
R_DS(ON) = 390 mΩ @ V_GS = –1.8 V
• Low gate charge, High Power and Current handling
capability
• High performance trench technology for extremely
low R_DS(ON)
• FLMP SC75 package: Enhanced thermal
performance in industry-standard package size
S2
S1
G1
G2
S2
S1
Bottom Drain Contact
4
3
5
2
6
1
Bottom Drain Contact
MOSFET Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_stg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
.G
FDJ1027P
7’’
Ratings
–20
±8
–2.8
–12
1.5
0.9
–55 to +150
80
5
8mm
Units
V
V
A
°C
°C/W
3000 units
2004 Fairchild Semiconductor Corporation
FDJ1027P Rev C1 (W)