FDI9406_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

June 2014
FDI9406_F085
N-Channel PowerTrench^® MOSFET
40 V, 110 A, 2.2 mΩ
D
Features
„ Typ R_DS(on) = 1.73mΩ at V_GS = 10V, I_D = 80A
„ Typ Q_g(tot) = 107nC at V_GS = 10V, I_D = 80A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter/Alternator
„ Distributed Power Architectures and VRM
„ Primary Switch for 12V Systems
G
TO-262AB
S
FDI SERIES
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings T_J = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GS
I_D
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (V_GS=10) (Note 1)
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Maximum Thermal Resistance, Junction to Ambient
T_C = 25°C
T_C = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
110
See Figure 4
174
176
1.18
-55 to + 175
0.85
43
Units
V
V
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
Device
FDI9406
FDI9406_F085
Package
TO-262AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting T_J = 25°C, L = 0.045mH, I_AS = 88A, V_DD = 40V during inductor charging and V_DD = 0V during time in avalanche.
3: R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the
rating presented here is
bdarasiendpoinnsm. o^Ru^θn^Jt^Cingisognuaar1aninte^{2epdadbyofd2eoszigcnowppheiler.}
R_θJAis
determined
by
the
user's
board
design.
The maximum
©2014 Fairchild Semiconductor Corporation
1
FDI9406_F085 Rev. C3
www.fairchildsemi.com