FDI150N10 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 57 A, 16 mΩ

FDI150N10
N-Channel PowerTrench^® MOSFET
100 V, 57 A, 16 mΩ
November 2013
Features
• R_DS(on) = 12 mΩ (Typ.) @ V_GS = 10 V, I_D = 49 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench^® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micor Solar Inverter
D
GDS
I²-PAK
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDI150N10
100
±20
57
40
228
132
7.5
110
0.88
-55 to +150
300
FDI150N10
1.13
62.5
Unit
V
V
A
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDI150N10 Rev. C1
www.fairchildsemi.com